1998. 12. 31
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SEMICONDUCTOR
TECHNICAL DATA
KTC2018
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
FEATURES
High Breakdown Voltage : V
CEO
=100V.
Low Collector Saturation Voltage :V
CE(sat)
=2.0V(Max.).
Complementary to KTA1038.
MAXIMUM RATINGS (Ta=25 )
DIM MILLIMETERS
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-220AB
10.30 MAX
15.30 MAX
0.80
3.60 0.20
3.00
6.70 MAX
13.60 0.50
5.60 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
A
E
M
M
1
2
3
F
B
G
H
L
C
K
J
O
N
P
D
1.37 MAX
1.50 MAX
R
S
Q
C
T
Q
1.50
R
9.50 0.20
S
8.00 0.20
T
2.90 MAX
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
(1) Classification 0:70 140, Y:120 240
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=100V, I
E
=0
-
-
100
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
1.0
mA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=50mA, I
B
=0
100
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10mA, I
C
=0
5.0
-
-
V
DC Current Gain
h
FE
(1) (Note)
V
CE
=5V, I
C
=1A
70
-
240
h
FE
(2)
V
CE
=5V, I
C
=4A
20
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=4A, I
B
=0.4A
-
-
2.0
V
Base-Emitter Voltage
V
BE
V
CE
=5V, I
C
=1A
-
-
1.5
V
Transition Frequency
f
T
V
CE
=5V, I
C
=1A
-
30
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
40
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
100
V
Collector-Emitter Voltage
V
CEO
100
V
Emitter-Base Voltage
V
EB0
5
V
Collector Current
I
C
5
A
Emitter Current
I
E
-5
A
Base Current
I
B
0.5
A
CollectorPower Dissipation
(Tc=25 )
P
C
40
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
1998. 12. 31
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KTC2018
Revision No : 1
COLLECTOR CURRENT I (A)
0
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
COLLECTOR POWER DISSIPATION
0
C
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
COLLECTOR CURRENT I (A)
C
0.1
3
COLLECTOR-EMITTER VOLTAGE V (V)
CE
SAFE OPERATING AREA
h - I
C
COLLECTOR CURRENT I (A)
0.01
0.03
0.1
0.3
FE
DC CURRENT GAIN h
10
COLLECTOR-EMITTER SATURATION
CE(sat)
0.01
COLLECTOR CURRENT I (A)
C
V - I
1
2
3
4
5
6
7
1
2
3
4
5
COMMON EMITTER
Tc=25 C
25
0
300
200
150
100
50
I =20mA
B
0
FE
C
1
3
5
30
50
100
200
COMMON EMITTER
V =5V
CE
Tc=75 C
Tc=25 C
Tc=-25 C
CE(sat)
C
VOLTAGE V (V)
0.03
0.1
0.3
1
3
10
0.05
0.1
0.3
0.5
1
2
COMMON EMITTER
I /I =10
C B
Tc=75 C
Tc=25 C
Tc=-25 C
5
10
30 50
100
300 500
0.3
0.5
1
3
5
10
20
SINGLE
NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE
DERATED LINEARLY
WITH INCREASE IN
TEMPERATURE
*
I MAX.(PULSED)
C
*
I MAX.
C
(CONTINUOUS)
1mS
*
10
m
S
*
*
100mS
1s
*
DC OPERATION
Tc=2
5 C
V MAX.
CEO
P (W)
25
50
75
100
125
150
175
200
10
20
30
40
50
Tc=Ta
INFINITE HEAT SINK
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